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IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
D
FEATURES
600 VGS = 10 V 220 67 96 Single 0.175
* Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications Requirements
Available
* Lower Gate Charge Results in Simpler Drive RoHS* COMPLIANT * Enhances dV/dt Capabilities Offer Improved Ruggedness * Higher Gate Voltage Threshold Offer Improved Noise Immunity
SUPER-247TM
* Lead (Pb)-free Available
APPLICATIONS
G S D G S N-Channel MOSFET
* Zero Voltage Switching SMPS * Telecom and Server Power Supplies * Uninterruptible Power Supplies * Motor Control Applications
ORDERING INFORMATION
Package Lead (Pb)-free SnPb SUPER-247TM IRFPS29N60LPbF SiHFPS29N60L-E3 IRFPS29N60L SiHFPS29N60L
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT 600 30 29 18 110 3.8 570 29 48 480 15 - 55 to + 150 300d 10 1.1 W/C mJ A mJ W V/ns C lbf * in N*m A UNIT V
Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 1.5 mH, RG = 25 , IAS = 29 A (see fig.12a). c. ISD 29 A, dI/dt 830 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91255 S-81359-Rev. A, 07-Jul-08 www.vishay.com 1
IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambienta Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain)a Note a. Rth is measured at TJ approximately 90 C. SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.26 C/W UNIT
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related) Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Body Diode Recovery Current IS ISM VSD trr TJ = 25 C, IF = 29 A TJ = 125 C, dI/dt = 100 A/sb Qrr IRRM TJ = 25 C MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Coss eff. Coss eff. (ER) Qg Qgs Qgd RG td(on) tr td(off) tf
VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 17 Ab VDS = 50 V, ID = 17 Ab
600 3.0 15 -
0.53 0.175 6160 530 44 250 190 0.86 34 100 66 54
5.0 100 50 2.0 0.21 220 67 96 -
V V/C V nA A mA S
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5b VDS = 0 V to 480 Vc
pF
-
VGS = 10 V
ID = 29 A, VDS = 480 V, see fig. 7 and 15b
-
nC
f = 1 MHz, open drain VDD =300 V, ID = 29 A, RG = 4.3 , VGS = 10 V, see fig. 11a and 11bb
ns
-
130 240 630 1820 9.4
29 A 110 1.5 190 360 950 2720 14 V ns C A
G
S
TJ = 25 C, IS = 29 A, VGS = 0 Vb
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominatred by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91255 S-81359-Rev. A, 07-Jul-08
IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
1000
TOP VGS 15V 10V 9.0V 7.0V 7.0V 5.5V 5.0V 4.5V
20s PULSE WIDTH Tj = 25C
1000.00
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100.00
T J = 150C
10.00
10
BOTTOM
1
1.00
T J = 25C
0.1
0.10
4.5V
0.01 0.1 1 10 100
0.01 4 6
VDS = 50V 20s PULSE WIDTH
8 10
VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics
VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics
100
TOP
3.0
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
10
BOTTOM
VGS 15V 10V 9.0V 7.0V 7.0V 5.5V 5.0V 4.5V
ID = 28A
2.5
VGS = 10V
2.0
(Normalized)
1.5
1
4.5V
1.0
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
0.5
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics
T J , Junction Temperature (C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91255 S-81359-Rev. A, 07-Jul-08
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IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
100000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID= 28A VDS= 480V VDS= 300V VDS= 150V
10000
16
C, Capacitance(pF)
Ciss
12
1000
Coss
100
8
4
Crss
10 1 10 100 1000
0 0 40 80 120 160 200 240 Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
40
20
35 30
Energy (J)
ID= 28A VDS= 480V VDS= 300V VDS= 150V
VGS , Gate-to-Source Voltage (V)
0 100 200 300 400 500 600 700
16
25 20 15 10 5 0
12
8
4
0 0 40 80 120 160 200 240 Q G Total Gate Charge (nC)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS
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Document Number: 91255 S-81359-Rev. A, 07-Jul-08
IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
100
10
100sec 1msec
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 10000 VDS, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
10msec
30
VGS
RD VDS D.U.T. + - VDD 10 V
Pulse width 1 s Duty factor 0.1 %
25
ID, Drain Current (A)
RG
20
15
Fig. 11a - Switching Time Test Circuit
10
VDS 90 %
5
0 25 50 75 100 125 150 T C , Case Temperature (C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
10 % VGS td(on) tr td(off) tf
Fig. 11b - Switching Time Waveforms
Document Number: 91255 S-81359-Rev. A, 07-Jul-08
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IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20 0.10 0.05
0.01
0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
5.0
1200
EAS , Single Pulse Avalanche Energy (mJ)
VGS(th) GateThreshold Voltage (V)
4.0
ID = 250A
1000
ID TOP 13A 18A BOTTOM 29A
800
3.0
600
400
2.0
200
1.0 - 75 - 50 - 25 0 25 50 75 100 125 150
0 25 50 75 100 125 150
T J, Temperature (C)
Fig. 13 - Threshold Voltage vs. Temperature
Starting T J , Junction Temperature (C)
Fig. 14a - Maximum Avalanche Energy vs. Drain Current
15 V
VDS
L
Driver
RG
20 V
D.U.T
IAS tp
+ - VDD
A
0.01
Fig. 14b - Unclamped Inductive Test Circuit
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Document Number: 91255 S-81359-Rev. A, 07-Jul-08
IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
Current regulator Same type as D.U.T.
VDS
50 k
tp
12 V
0.2 F 0.3 F
+
D.U.T. VGS
-
VDS
IAS
3 mA
IG ID Current sampling resistors
Fig. 14c - Unclamped Inductive Waveforms
Fig. 15a - Gate Charge Test Circuit
10 V QGS
QG
QGD
VG
Charge
Fig. 15b - Basic Gate Charge Waveform
Document Number: 91255 S-81359-Rev. A, 07-Jul-08
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IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
rG
* * * *
dV/dt controlled by r G Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode forward drop
Ripple 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 16 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91255.
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Document Number: 91255 S-81359-Rev. A, 07-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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